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- W2163322433 abstract "Insulated gate bipolar transistors (IGBTs) based on the non-punch-through (NPT) design approach exhibit excellent safe operating area (SOA) and short-circuit endurance, a positive temperature coefficient of on-state voltage over the operating current range, and low silicon cost. These merits have supported the development and commercialization of NPT IGBTs above the 1200-V class. However, the need for quite thin silicon to obtain competitive on-state losses at 1200-V and below classes has hindered the use of the NPT approach in this area. A new punch-through (PT) IGBT has been developed which exhibits the merits of the NPT approach, rugged SOA and short-circuit endurance, while also having a better tradeoff relation between on-state voltage and turn-off loss than either existing NPT or third-generation PT IGBTs." @default.
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- W2163322433 date "2003-01-20" @default.
- W2163322433 modified "2023-09-27" @default.
- W2163322433 title "A new punch through IGBT having a new N-buffer layer" @default.
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- W2163322433 doi "https://doi.org/10.1109/ias.1999.800025" @default.
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