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- W2163661511 abstract "This paper presents a cost effective integration of 22V to 42V rated MOS in a 0.18μm platform for high voltage applications. High voltage capability is achieved by adding only 2 masks to the baseline 3.3V CMOS. The process modularity enables appropriate customisations to address a wide range of applications with the same platform." @default.
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- W2163661511 date "2008-05-01" @default.
- W2163661511 modified "2023-10-14" @default.
- W2163661511 title "HVCMOS8A: 22V-42V Rated MOS integration in a 0.18μm technology platform for High Voltage applications" @default.
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- W2163661511 doi "https://doi.org/10.1109/ispsd.2008.4538896" @default.
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