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• W2163759660 abstract "ABSTRACT Conducting atomic force microscopy and scanning surface potential microscopy were used to study the local electrical properties of gallium‐doped zinc oxide (GZO) films prepared by pulsed laser deposition (PLD) on a polyimide (PI) substrate. For a PLD deposition process time of 8 min, the root‐mean‐square roughness, coverage percentage of the conducting regions, and mean work function on the GZO surface were 2.33 nm, 96.6%, and 4.82 eV, respectively. When the GZO/PI substrate was used for a polymer light‐emitting diode (PLED), the electroluminescence intensity increased by nearly 20% compared to a standard PLED, which was based on a commercial‐ITO/glass substrate. Microsc. Res. Tech. 76:783–787, 2013 . © 2013 Wiley Periodicals, Inc." @default.
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• W2163759660 date "2013-05-16" @default.
• W2163759660 modified "2023-10-18" @default.
• W2163759660 title "Influence of gallium-doped zinc-oxide thickness on polymer light-emitting diode luminescence efficiency" @default.
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• W2163759660 doi "https://doi.org/10.1002/jemt.22229" @default.
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