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• W2163849468 abstract "The plasma processes and growth reactions involved in the deposition of amorphous, polymorphous and microcrystalline silicon thin films are reviewed. The reference being a-Si:H deposition through surface reactions of SiH3 radicals, we study the growth of microcrystalline silicon films produced by the layer-by-layer and standard hydrogen dilution techniques. We show that subsurface reactions play a key role, particularly during the incubation phase where hydrogen is responsible for the formation of a porous layer in which nucleation takes place. The evolution of the film properties is related to the long range effects of hydrogen. Coming back to a-Si:H deposition, we further consider the deposition at low substrate temperature (<200°C) and pressure (<5 Pa) where the role of ions is dominant and at deposition rates where powder formation takes place. We propose that rather than a drawback, nanoparticle formation in silane plasmas might be considered as a potential for obtaining new silicon films. We address in particular the deposition of polymorphous silicon consisting of an a-Si:H matrix with silicon nanocrystallites produced in the gas phase. Despite their heterogeneity polymorphous silicon films have improved transport properties and stability with respect to a-Si:H." @default.
• W2163849468 created "2016-06-24" @default.
• W2163849468 creator A5090015400 @default.
• W2163849468 date "2000-05-01" @default.
• W2163849468 modified "2023-10-05" @default.
• W2163849468 title "Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films" @default.
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• W2163849468 doi "https://doi.org/10.1016/s0022-3093(99)00714-0" @default.
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