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• W2164010209 abstract "A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-/spl mu/m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5 /spl mu/m) formed by a2004 sacrificial oxide layer. The fabricated accelerometer is 7/spl times/9 mm/sup 2/ in size, has 100 Hz bandwidth, >/spl sim/5 pF/g measured sensitivity and calculated sub-/spl mu/g//spl radic/Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 /spl mu/g//spl radic/Hz (>1.5 kHz) and 1.08 /spl mu/g//spl radic/Hz (>600 Hz) for in-plane and out-of-plane devices, respectively." @default.
• W2164010209 created "2016-06-24" @default.
• W2164010209 creator A5014820597 @default.
• W2164010209 creator A5030810852 @default.
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• W2164010209 date "2005-04-01" @default.
• W2164010209 modified "2023-09-26" @default.
• W2164010209 title "A monolithic three-axis micro-g micromachined silicon capacitive accelerometer" @default.
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• W2164010209 doi "https://doi.org/10.1109/jmems.2004.839347" @default.
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