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- W2164134906 abstract "ABSTRACT GalnP material has been used as a high gap semiconductor on InP to fabricate Schottky diodes. The experimental result shows that the device exhibits good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a Gallium composition of 25 %, a GalnP thickness of 100 A, and has a barrier height of 0.73 eV, an ideality factor of 1.1 and a reverse current of 0.3 nA at -IV.Indium Phosphide has excellent properties that makes it suitable for high speed electronic applications. Due to its low Schottky barrier height, (0.43 eV for Au/InP), it cannot be used as a gate in Field Effect transistor (FET) fabrication. InP has its Fermi level pinned bysurface traps ^ . The Fermi level position at the surface (j/s ) stays almost constant and the barrier height 4>o of the Schottky diode on InP is almost independent of the metal work function and can be expressed as o = Eg - ^s ( Eg : Bandgap). To increase the Schottky barrier height since there is no way to avoid surface Fermi level pinning, we have to find a high bandgap semi-conductor. The use of a heterostructure made of a high gap on a low gap (InP) material leads to the band structure in Figure 1, in the case of a Schottky" @default.
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- W2164134906 date "1989-11-28" @default.
- W2164134906 modified "2023-09-27" @default.
- W2164134906 title "Pseudomorphic GaInP Schottky Diode On InP" @default.
- W2164134906 doi "https://doi.org/10.1117/12.962023" @default.
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