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- W2164241792 abstract "Advances in wireless communications and information processing systems require implementation of very high performance electronic systems. In recent years, SiGe heterojunction bipolar transistors (HBTs) have emerged as one of the leading contenders to satisfy these demands. The low emitter-base turn-on voltage and device scaling significantly reduce power consumption in circuit operation, while maintaining high speed. With the increasing demand placed on voice and data communications, transmitting, receiving and processing information at high frequencies and high speeds, the use of SiGe bipolar transistors becomes increasingly important." @default.
- W2164241792 created "2016-06-24" @default.
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- W2164241792 date "2002-11-07" @default.
- W2164241792 modified "2023-09-26" @default.
- W2164241792 title "Overview of SiGe technology modeling and application" @default.
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- W2164241792 doi "https://doi.org/10.1109/isqed.2000.838856" @default.
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