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- W2164327271 abstract "A mesh-optimization technique is applied to the numerical simulation of semiconductor devices. The technique consists of moving the mesh-nodes while keeping their number constant, and is based upon the maximization of a functional related to the RHS of Poisson's equation. The result is equivalent to the minimization of the seminorm of u - u_{t} , where u is the normalized electric potential and u T its discretization over mesh T . The nodal-coordinate variations Deltabar{x} induce variations Deltabar{u} onto the electric potential, yielding a system of algebraic equations where both unknown vectors Deltabar{x} , Deltabar{u} appear. A suitable technique avoids any matrix inversion and allows application of the gradient method for the maximization procedure. The method has been tested on a one-dimensional Poisson solver for bipolar transistors." @default.
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- W2164327271 date "1983-09-01" @default.
- W2164327271 modified "2023-09-27" @default.
- W2164327271 title "Optimization of the finite-element solution of the semiconductor-device Poisson equation" @default.
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- W2164327271 doi "https://doi.org/10.1109/t-ed.1983.21264" @default.
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