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• W2164476989 abstract "In this study, we successfully achieved a relatively high field-effect mobility of 37.7 cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50 °C according to thermal calculation. Our analysis revealed that high-energy irradiation in ELA produced a mixed phase of InZnO and SiO2, leading to the deterioration of TFT characteristics." @default.
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• W2164476989 date "2013-03-25" @default.
• W2164476989 modified "2023-09-26" @default.
• W2164476989 title "Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing" @default.
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• W2164476989 doi "https://doi.org/10.1063/1.4798519" @default.
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