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• W2164534367 abstract "We report studies on the effect of UV∕ozone cleaning on n-type GaN nanowires prior to ohmic contact deposition and the effect of annealing temperature on the total resistance of the contacted nanowires. The UV∕ozone cleaning for periods of reduced surface carbon and oxygen contamination, as determined by Auger electron spectroscopy measurements and led to a specific contact resistivity of after annealing in the range . After subtraction of this contact resistivity from the total resistance of the nanowires, it was found that the ozone treatment reduced the apparent resistivity from . These results show the importance of surface cleaning in extracting the transport properties of GaN nanowires." @default.
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• W2164534367 date "2006-01-01" @default.
• W2164534367 modified "2023-10-09" @default.
• W2164534367 title "Effect of Ozone Cleaning and Annealing on Ti∕Al∕Pt∕Au Ohmic Contacts on GaN Nanowires" @default.
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• W2164534367 doi "https://doi.org/10.1149/1.2179187" @default.
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