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- W2164964510 abstract "We present a systematic investigation on the formation of the highly mismatched alloy GaNxAs1−x using N+-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaNxAs1−x with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N+ implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaNxAs1−x films are discussed." @default.
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- W2164964510 date "2003-06-26" @default.
- W2164964510 modified "2023-09-23" @default.
- W2164964510 title "Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs" @default.
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- W2164964510 doi "https://doi.org/10.1063/1.1582393" @default.
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