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• W2165304055 abstract "Threshold voltage dispersion due to random discrete dopant fluctuation was simulated in recessed-channel, triple-gate, and saddle MOS structures, targeting future floating-gate memory cell transistor. All nonplanar structures showed improved dispersion characteristics, compared with the planar type by proper adjustment of the tunnel oxide structure and channel doping level. The recessed-channel showed a continuous improvement of dispersion with the channel area widening beyond a certain threshold recess depth. In triple-gate structure, a significant reduction in dispersion is shown possible primarily via the superior gate controllability. Among the nonplanar structures, the saddle structure yielded the lowest variation for a fixed target with the choice of moderate device parameters from the other structures." @default.
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• W2165304055 date "2008-06-01" @default.
• W2165304055 modified "2023-09-25" @default.
• W2165304055 title "Three-Dimensional Simulation of Dopant-Fluctuation-Induced Threshold Voltage Dispersion in Nonplanar MOS Structures Targeting Flash EEPROM Transistors" @default.
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• W2165304055 doi "https://doi.org/10.1109/ted.2008.921988" @default.
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