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- W2165352829 abstract "First principle calculations have been carried out to investigate the effects of oxygen vacancy on the electronic structure of silicon dioxide. Energy levels within the band gap at E c−0.11 eV and E v + 1.98 eV has been obtained. Thus, the effects of the oxygen vacancy located at the silicon/silicon dioxide interface on the tunnelling current through the oxide have been calculated. When the oxide thickness is less than 3 nm, the effects of the defect-assisted electron tunnelling on the tunnelling current will increase with the oxide thickness and oxide field, whereas the defect-assisted hole tunnelling on the tunnelling current will decrease with the oxide thickness and oxide field increasing." @default.
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- W2165352829 date "2007-11-01" @default.
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- W2165352829 title "Tunnelling currents through oxygen vacancies in ultrathin SiO<sub>2</sub>layer" @default.
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- W2165352829 doi "https://doi.org/10.1080/00207210701755239" @default.
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