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- W2165451166 abstract "Annealing has been carried out at 950/spl deg/C under various As pressure for undoped(ND) semi-insulating(SI) LECGaAs. The effects of the annealing on native defects and the electrical properties were investigated. The experimental results indicate that after a annealing at 950/spl deg/C for 14h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic acceptor defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing." @default.
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- W2165451166 date "2002-11-13" @default.
- W2165451166 modified "2023-09-24" @default.
- W2165451166 title "As interstitials diffusion and its effects on native defects and electrical properties of undoped LECGaAs during annealing" @default.
- W2165451166 cites W2035731432 @default.
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- W2165451166 doi "https://doi.org/10.1109/icsict.2001.981476" @default.
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