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- W2166168940 abstract "The W/n-GaAs Schottky diodes A and B were fabricated by rf sputter deposition of W at rf powers of 400 and 300 Watt, respectively. The Schottky diode B was subjected to a 90 min. anneal at 390/spl deg/C in Ar ambient. The forward voltage-temperature (V/sub F/-T) measurements were carried out in the temperature range 140-363 K at constant activation currents (I/sub F/) in the range 2.5-500 /spl mu/A. The V/sub F/-T characteristics were linear for I/sub F/ /spl ges/50 /spl mu/A in the diode A and for I/sub F//spl ges/2.5 /spl mu/A in the diode B. From the V/sub F/-T characteristics at 100 /spl mu/A, the values of -2.31 mVK/sup -1/ and 2.59 mVK/sup -1/ for the temperature coefficient of the forward bias voltage (dV/sub F//dT) for the diodes A and B, respectively, were determined. The value of dV/sub F//dT for the diode B was quite close to the theoretical value of -2.70 mVK/sup -1/. For constant currents in the range 2.5 /spl mu/A<I/sub F/<100 /spl mu/A, the linear extrapolations of the experimental V/sub F/-T characteristics in the diode B intersected the V/sub F/ axis at the same point which provided the values of 0.86 V and 0.70 V for the barrier height at 0 K and 300 K, respectively, independent of the value of the activation current. The barrier height values thus obtained are in good agreement with the value obtained by other method." @default.
- W2166168940 created "2016-06-24" @default.
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- W2166168940 date "2002-11-27" @default.
- W2166168940 modified "2023-10-07" @default.
- W2166168940 title "Voltage-temperature characteristics of W/n-GaAs Schottky diodes activated by the constant forward current: application as temperature sensors" @default.
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- W2166168940 doi "https://doi.org/10.1109/iccdcs.1998.705812" @default.
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