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• W2166302118 abstract "The decay of the integral band-to-band photoluminescence (PL) at (100) orientated n-doped GaAs (Te; n0 = 5×1017 … 1×1018cm3) in contact with aqueous 1 M HCl was investigated with the time-correlated single photon counting technique. The PL-decay was measured at various externally applied potentials, at constant and low density of injected carriers (pi≪n0), and at an excitation wavelength of λexc = 647.1 nm. The studies included electrodes modified by dipping in a solution of 5×10−3 M RuCl3 in 1 M HCl for 20 minutes. It was observed that the PL-decay measured at low injection level shows a reproducible and characteristic dependence on the externally applied potential. Within the accuracy of our time-correlated single photon counting equipment, the PL-decay time remains nearly constant and short in the range of potential U = (−0.3 … −0.9) V(Ag/AgCl). For the nonmodified electrodes the PL-decay time increases with increasing cathodic polarization in the range of potential U = (-0.9 … −1.1) V(Ag/AgCl) up to a maximum at U ≈ −1.1 V(Ag/AgCl), which corresponds to the (Mott-Schottky) flatband potential in the dark. At further cathodic polarization the cathodic current (due to the evolution of hydrogen) during the measurements becomes significant and it was observed that the PL-decay time decreases. After a treatment with Ru3+, the behaviour in the range of potential on the cathodic side of U = −0.9 V(Ag/AgCl) is different. The experimental observations could be confirmed qualitatively by results of computer simulations based on the Two-dimensional Semi-Conductor Analysis Package (TOSCA). At potentials on the anodic side of the flatband potential (depletion range) the decay times are short as well as independent of the degree of the band bending, of the surface recombination velocity, and of the photocurrent, respectively. This observation will be interpreted qualitatively by including the diffusion of the minority carriers toward the (dark) depletion layer as a competitive process for the radiative recombination in the bulk. Near the flatband potential the decay time of PL increases within a potential range of ΔU ≈ 200 mV depending on the density of injected carriers as well as on the rates of the surface recombination and of the minority carrier transfer (photocurrent). Based on a qualitative explanation for this characteristic dependence of the PL-decay time on the potential, the values of the surface recombination velocity and of the exchange photocurrent density are estimated to be S0<106 cm/s and jph,0<10−8 A/cm2, respectively, for nonmodified electrodes and S0≥106 cm/s and/or jph,0≥10−8 A/cm2, respectively, for electrodes treated with Ru3+ ions." @default.
• W2166302118 created "2016-06-24" @default.
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• W2166302118 date "1994-08-01" @default.
• W2166302118 modified "2023-10-18" @default.
• W2166302118 title "On the dependence of the photoluminescence decay on the externally applied potential at the junction n-GaAs/1 M HCl" @default.
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• W2166302118 doi "https://doi.org/10.1002/bbpc.19940980806" @default.
• W2166302118 hasPublicationYear "1994" @default.
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