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- W2166303134 abstract "Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system." @default.
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- W2166303134 date "2015-09-01" @default.
- W2166303134 modified "2023-09-26" @default.
- W2166303134 title "Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor" @default.
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- W2166303134 doi "https://doi.org/10.15302/j-eng-2015043" @default.
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