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- W2166832419 abstract "The dc performance of a novel InP/InGaAs p-n-p heterostructure-emitter bipolar transistor is first demonstrated. Though the valence band discontinuity at an InP/InGaAs heterojunction is relatively large, the addition of a heavy doped as well as thin p/sup +/-InGaAs emitter layer between a p-InP confinement and n/sup +/-InGaAs base layers effectively eliminates the potential spike at emitter-base junction, lowers the emitter-collector offset voltage, and increases the barrier for electrons, simultaneously. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV are achieved. To the author's knowledge, the offset voltage of the studied device is the lowest value among of the InP/InGaAs p-n-p heterojunction bipolar transistors." @default.
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- W2166832419 date "2006-05-01" @default.
- W2166832419 modified "2023-10-18" @default.
- W2166832419 title "DC performance of InP/InGaAs p-n-p heterostructure-emitter bipolar transistor" @default.
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- W2166832419 doi "https://doi.org/10.1109/ted.2006.872691" @default.
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