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• W2167010581 abstract "For Silicon Carbide (SiC) high-voltage rectifier diodes, contradictions appear when the most important parameter of the diodes, the minority carrier lifetime, is measured by different techniques. A qualitative analysis and a computer simulation have been carried out to clarify the origin of these contradictions. For 4H-SiC p/sup +/n diodes with 6 kV blocking capability, data on residual voltage drop at high current densities, switch-on time, reverse current recovery, and post-injection voltage decay are analyzed. It is shown that the whole set of experimental data can be explained by the existence of a thin (l/spl sim/0.1 /spl mu/m) layer near the metallurgical boundary of the p/sup +/n junction with very small carrier lifetime /spl tau//sub l/ that is essentially smaller than the carrier lifetime /spl tau/ across the remaining part of the 50-/spl mu/m n-base. It is emphasized that the existence of such a layer allows, under certain conditions, the combination of a relatively low residual forward voltage drop and very fast reverse recovery. Approaches to minority carrier lifetime measurements are discussed." @default.
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• W2167010581 date "2001-01-01" @default.
• W2167010581 modified "2023-10-18" @default.
• W2167010581 title "Paradoxes of carrier lifetime measurements in high-voltage SiC diodes" @default.
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• W2167010581 doi "https://doi.org/10.1109/16.936692" @default.
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