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- W2167029494 abstract "Key components and operating characteristics of II–VI laser diodes have been investigated. The voltage drop at the contact to p-ZnSe could be reduced from above 10 V to below 2V at high current densities by a multilayer contact with ZnSe and ZnTe layers with variing thickness ratio. By the replacement of MgZnSSe with a ZnSe/MgZnSSe superlattice as material for the cladding layers in the laser diode, doping levels could be increased by a factor of 2 and with the use of ZnSe substrates instead of GaAs, high brightness light emitting devices and laser diodes with long lifetimes could be manufactured." @default.
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- W2167029494 date "1999-01-01" @default.
- W2167029494 modified "2023-09-26" @default.
- W2167029494 title "Growth and characterization of II–VI semiconductor lasers" @default.
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- W2167029494 doi "https://doi.org/10.1007/bfb0107607" @default.
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