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- W2167092992 abstract "The crystallization evolution of boron and phosphorus doped amorphous Si1−xGex films (5×1017–5×1020 cm−3), deposited on SiO2/Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1−xGex films were fully crystallized at ∼600°C. Up to 800°C no morphology changes were observed. Between 800 and 950°C, voids and hillocks were gradually developed in the films, which consequently collapsed. The Hall concentration and mobility were characterized in the Si1−xGex films, annealed between 600 and 800°C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm2/V s and 2000 (Ω cm)−1, respectively." @default.
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- W2167092992 date "1999-01-01" @default.
- W2167092992 modified "2023-09-27" @default.
- W2167092992 title "Stability and transport properties of microcrystalline Si1−xGex films" @default.
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- W2167092992 doi "https://doi.org/10.1016/s0040-6090(98)01378-9" @default.
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