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• W2167535044 abstract "The optical gain and threshold current density of CdZnSe-based semiconductor lasers are calculated theoretically with strain and quantum confinement effects taken into account. Both diffusion and drift components are incorporated into the calculation of leakage current. Optimized structures are obtained for CdZnSe-based lasers with different structures through minimizing the threshold current density. A minimum current density of about 200 A/cm/sup 2/ is obtained for a Cd/sub 0.2/Zn/sub 0.8/Se/ZnS/sub 0.06/Se/sub 0.94//Zn/sub 0.75/Mg/sub 0.25/S/sub 0.42/Se/sub 0.58/ modified MQW laser.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
• W2167535044 created "2016-06-24" @default.
• W2167535044 creator A5070881348 @default.
• W2167535044 date "1994-07-01" @default.
• W2167535044 modified "2023-09-23" @default.
• W2167535044 title "Structure-dependent threshold current density for CdZnSe-based II-VI semiconductor lasers" @default.
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• W2167535044 doi "https://doi.org/10.1109/3.299488" @default.
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