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• W2167884673 abstract "In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C." @default.
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• W2167884673 date "2011-04-14" @default.
• W2167884673 modified "2023-09-23" @default.
• W2167884673 title "Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering" @default.
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• W2167884673 doi "https://doi.org/10.1186/1556-276x-6-341" @default.
• W2167884673 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/3211430" @default.
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• W2167884673 hasPublicationYear "2011" @default.
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