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- W2167887321 abstract "Critical N-base layer design in IGBT is discussed regarding electro-magnetic interference (EMI) and switching losses during turn-off. The newly proposed criteria for oscillation and avalanche induced loss were given by a simple equation model and the validity of the model has been confirmed with experimental results. This paper shows an efficient design method of N-base for EMI-free IGBT with considering the turn-off loss. In addition, EMI reduction structure with partly buried N layer in N-base was proposed for break through the design limit of N-base." @default.
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- W2167887321 date "2008-05-01" @default.
- W2167887321 modified "2023-09-25" @default.
- W2167887321 title "Critical IGBT Design Regarding EMI and Switching Losses" @default.
- W2167887321 cites W1880733722 @default.
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- W2167887321 doi "https://doi.org/10.1109/ispsd.2008.4538929" @default.
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