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- W2168133025 abstract "Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as an on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide in sub-quarter-micron CMOS processes. From the experimental results, the switching voltage and turn-on time of such double-triggered SCR (DT-SCR) device has been confirmed to be significantly reduced by this double-triggered technique." @default.
- W2168133025 created "2016-06-24" @default.
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- W2168133025 date "2003-09-01" @default.
- W2168133025 modified "2023-09-27" @default.
- W2168133025 title "SCR device with double-triggered technique for on-chip ESD protection in sub-quarter-micron silicided CMOS processes" @default.
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- W2168133025 doi "https://doi.org/10.1109/tdmr.2003.815192" @default.
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