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• W2168348525 abstract "The remote plasma nitridation (RPN) of an HfO2 film using N2 and NH3 has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 °C show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO2 film nitrided with NH3-RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf–silicate. The C–V characteristics of an HfOxNy gate dielectric nitrided with NH3-RPN have a smaller equivalent oxide thickness than that nitrided with N2-RPN in spite of its thicker interfacial layer." @default.
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• W2168348525 date "2010-12-01" @default.
• W2168348525 modified "2023-10-06" @default.
• W2168348525 title "Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics" @default.
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• W2168348525 doi "https://doi.org/10.1016/j.apsusc.2010.08.069" @default.
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