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• W2168443337 abstract "Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth profile and strained-silicon-layer thickness significantly improved transconductance, on resistance, and leakage current. Breakdown voltage of strained-silicon MOSFETs was the same as silicon MOSFETs even at elevated temperatures. RF/analog performances, such as cutoff frequency and 1/f noise, were improved by this technology while keeping high-driving-voltage capability." @default.
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• W2168443337 date "2006-05-01" @default.
• W2168443337 modified "2023-09-26" @default.
• W2168443337 title "Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage" @default.
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• W2168443337 doi "https://doi.org/10.1109/ted.2006.872892" @default.
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