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- W2168546989 abstract "physica status solidi (a)Volume 85, Issue 2 p. K179-K182 Short Note Dependence of I-U Characteristics of GaAs n+-n-n+ Diodes on the Active Region Length S. Kačiulis, S. Kačiulis Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius Search for more papers by this authorK. Kibickas, K. Kibickas Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius Search for more papers by this authorJ. Paršeliūnas, J. Paršeliūnas Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius Search for more papers by this author S. Kačiulis, S. Kačiulis Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius Search for more papers by this authorK. Kibickas, K. Kibickas Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius Search for more papers by this authorJ. Paršeliūnas, J. Paršeliūnas Institute of Semiconductor Physics, Academy of Sciences of the Lithuanian SSR, Vilnius Search for more papers by this author First published: 16 October 1984 https://doi.org/10.1002/pssa.2210850261Citations: 3 52K. Pozhelos, 232600 Vilnius, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume85, Issue216 October 1984Pages K179-K182 RelatedInformation" @default.
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- W2168546989 title "Dependence of I-U Characteristics of GaAs n+-n-n+ Diodes on the Active Region Length" @default.
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