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- W2168554420 abstract "Tunnelling characteristics have been measured for Co–insulator–Py magnetic junctions with Dy- or Gd-doped Al2O3 barriers. The theoretically predicted enhancement of the magneto-resistance due to resonant tunnelling in the presence of paramagnetic impurities is not borne out. However, even a full monolayer of Dy or Gd has no detrimental effect on the junction magnetoresistance (JMR) at low temperature and low bias voltage. With increasing temperature and bias, the JMR of the doped junctions decreases significantly faster than the JMR of the Al2O3 control junctions. Junctions in which the entire barrier has been replaced by Dy2O3 or Gd2O3 show strong non-linear current– voltage characteristics, but display no JMR. It is shown that not direct tunnelling but spin-independent impurity-assisted tunnelling is the primary conductance channel in these junctions." @default.
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- W2168554420 date "2002-05-09" @default.
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- W2168554420 title "Resonant tunnelling in Dy- or Gd-doped Al2O3 magnetic tunnel junctions" @default.
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