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- W2168654920 abstract "This paper presents an 8 × 8 DRAM array fabricated using an aerosol jet printer to demonstrate the feasibility of gain-cell DRAMs in a p-type-only organic thin film transistor (OTFT) technology. This printing method can accommodate functional inks with a variety of viscosities and has a patterning precision of 10 μm. The underlying design philosophy was to implement a general purpose memory array with full read and write capability that can be utilized for a range of applications including electrochromic displays and/or sensor sheet arrays. The basic read and write operations of the 3T OTF memory cell are illustrated. Each transistor has a channel width of 500μm and a channel length of 25μm." @default.
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- W2168654920 date "2011-02-01" @default.
- W2168654920 modified "2023-09-23" @default.
- W2168654920 title "A 1V printed organic DRAM cell based on ion-gel gated transistors with a sub-10nW-per-cell Refresh Power" @default.
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- W2168654920 doi "https://doi.org/10.1109/isscc.2011.5746339" @default.
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