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• W2168775462 startingPage "115401" @default.
• W2168775462 abstract "A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices." @default.
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• W2168775462 date "2012-03-02" @default.
• W2168775462 modified "2023-10-12" @default.
• W2168775462 title "Photovoltaic device on a single ZnO nanowire p–n homojunction" @default.
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• W2168775462 doi "https://doi.org/10.1088/0957-4484/23/11/115401" @default.
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