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• W2168832008 endingPage "426" @default.
• W2168832008 startingPage "417" @default.
• W2168832008 abstract "Abstract Single junction InGaP/GaAs solar cells displaying high efficiency and record high open‐circuit voltage values have been grown by metal–organic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open‐circuit voltages of 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge‐related sub‐cell photoresponse. AM0 efficiencies close to 16% have been measured for a large number of small‐area cells, the performance of which is limited by non‐fundamental current losses due to significant surface reflection resulting from> 10% front‐surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 ns minority‐carrier lifetime that results from complete elimination of anti‐phase domains, and maintaining a threading dislocation density of ∼8 × 10 5 cm −2 , 19–20% AM0 single‐junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger‐area cells, with identical open‐circuit voltages and higher short‐circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large‐area scaling is possible in the near term. Comparison with a simple model indicates that the voltage output of these GaAs‐on‐Si cells follows the ideal behavior expected for lattice‐mismatched devices, demonstrating that unaccounted‐for defects and issues that have plagued other methods to epitaxially integrate III–V cells with Si are resolved by using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high‐efficiency, lightweight and strong III–V solar cells. Copyright © 2002 John Wiley & Sons, Ltd." @default.
• W2168832008 created "2016-06-24" @default.
• W2168832008 creator A5005790097 @default.
• W2168832008 creator A5014007247 @default.
• W2168832008 creator A5022090610 @default.
• W2168832008 creator A5046802184 @default.
• W2168832008 creator A5049221263 @default.
• W2168832008 creator A5060726954 @default.
• W2168832008 creator A5066390729 @default.
• W2168832008 creator A5072496400 @default.
• W2168832008 creator A5074666971 @default.
• W2168832008 creator A5077123646 @default.
• W2168832008 creator A5087576603 @default.
• W2168832008 creator A5087643661 @default.
• W2168832008 date "2002-08-27" @default.
• W2168832008 modified "2023-10-16" @default.
• W2168832008 title "Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers" @default.
• W2168832008 cites W1969950458 @default.
• W2168832008 cites W1982598109 @default.
• W2168832008 cites W2008725911 @default.
• W2168832008 cites W2027626980 @default.
• W2168832008 cites W2050676750 @default.
• W2168832008 cites W2060058597 @default.
• W2168832008 cites W2065405411 @default.
• W2168832008 cites W2073303842 @default.
• W2168832008 cites W2094349188 @default.
• W2168832008 cites W2143218782 @default.
• W2168832008 doi "https://doi.org/10.1002/pip.448" @default.
• W2168832008 hasPublicationYear "2002" @default.
• W2168832008 type Work @default.
• W2168832008 sameAs 2168832008 @default.
• W2168832008 citedByCount "123" @default.
• W2168832008 countsByYear W21688320082012 @default.
• W2168832008 countsByYear W21688320082013 @default.
• W2168832008 countsByYear W21688320082014 @default.
• W2168832008 countsByYear W21688320082015 @default.
• W2168832008 countsByYear W21688320082016 @default.
• W2168832008 countsByYear W21688320082017 @default.
• W2168832008 countsByYear W21688320082018 @default.
• W2168832008 countsByYear W21688320082019 @default.
• W2168832008 countsByYear W21688320082020 @default.
• W2168832008 countsByYear W21688320082021 @default.
• W2168832008 countsByYear W21688320082022 @default.
• W2168832008 countsByYear W21688320082023 @default.
• W2168832008 crossrefType "journal-article" @default.
• W2168832008 hasAuthorship W2168832008A5005790097 @default.
• W2168832008 hasAuthorship W2168832008A5014007247 @default.
• W2168832008 hasAuthorship W2168832008A5022090610 @default.
• W2168832008 hasAuthorship W2168832008A5046802184 @default.
• W2168832008 hasAuthorship W2168832008A5049221263 @default.
• W2168832008 hasAuthorship W2168832008A5060726954 @default.
• W2168832008 hasAuthorship W2168832008A5066390729 @default.
• W2168832008 hasAuthorship W2168832008A5072496400 @default.
• W2168832008 hasAuthorship W2168832008A5074666971 @default.
• W2168832008 hasAuthorship W2168832008A5077123646 @default.
• W2168832008 hasAuthorship W2168832008A5087576603 @default.
• W2168832008 hasAuthorship W2168832008A5087643661 @default.
• W2168832008 hasBestOaLocation W21688320082 @default.
• W2168832008 hasConcept C110738630 @default.
• W2168832008 hasConcept C119599485 @default.
• W2168832008 hasConcept C127413603 @default.
• W2168832008 hasConcept C160671074 @default.
• W2168832008 hasConcept C165801399 @default.
• W2168832008 hasConcept C171250308 @default.
• W2168832008 hasConcept C192562407 @default.
• W2168832008 hasConcept C198865614 @default.
• W2168832008 hasConcept C2779227376 @default.
• W2168832008 hasConcept C2780824857 @default.
• W2168832008 hasConcept C49040817 @default.
• W2168832008 hasConcept C510052550 @default.
• W2168832008 hasConcept C544956773 @default.
• W2168832008 hasConcept C550623735 @default.
• W2168832008 hasConcept C57410435 @default.
• W2168832008 hasConcept C57631264 @default.
• W2168832008 hasConceptScore W2168832008C110738630 @default.
• W2168832008 hasConceptScore W2168832008C119599485 @default.
• W2168832008 hasConceptScore W2168832008C127413603 @default.
• W2168832008 hasConceptScore W2168832008C160671074 @default.
• W2168832008 hasConceptScore W2168832008C165801399 @default.
• W2168832008 hasConceptScore W2168832008C171250308 @default.
• W2168832008 hasConceptScore W2168832008C192562407 @default.
• W2168832008 hasConceptScore W2168832008C198865614 @default.
• W2168832008 hasConceptScore W2168832008C2779227376 @default.
• W2168832008 hasConceptScore W2168832008C2780824857 @default.
• W2168832008 hasConceptScore W2168832008C49040817 @default.
• W2168832008 hasConceptScore W2168832008C510052550 @default.
• W2168832008 hasConceptScore W2168832008C544956773 @default.
• W2168832008 hasConceptScore W2168832008C550623735 @default.
• W2168832008 hasConceptScore W2168832008C57410435 @default.
• W2168832008 hasConceptScore W2168832008C57631264 @default.
• W2168832008 hasIssue "6" @default.
• W2168832008 hasLocation W21688320081 @default.
• W2168832008 hasLocation W21688320082 @default.
• W2168832008 hasOpenAccess W2168832008 @default.
• W2168832008 hasPrimaryLocation W21688320081 @default.
• W2168832008 hasRelatedWork W1966210320 @default.
• W2168832008 hasRelatedWork W1969507800 @default.
• W2168832008 hasRelatedWork W1973207636 @default.

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