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• W2168986288 abstract "This. paper presents a new peec-based inductor simulation tool, entitled L-Simulator, which employs a novel magPEEC modeling algorithm and an existing FasCap modeling algorithm to address both magnetic and electrical coupling effects respectively in 3D conductor + magnet +. dielectric geometries , hence being capable to simulate and design 3D magnetic-enhanced RF IC inductors. Applications on micromachined inductors in 0.2pm GaAs HEW process and magnetic-cored micro inductors in 0.18pm CMOS technology are discussed. 1. INTRODCTION Radio frequency integrated circuits (R.FIC) technologies enjoy unprecedented advancements in recent years thanks to the proliferation of wireless communication applications. While RFIC technology continuously benefits as IC technologies migrates into the very-deep-sub-micron (VDSM) reghe, lack of compact size high-performance hgh-frequency on-chip RF inductors (e.g., inductance L>lM and quality factor Q>l0 at multi-GRz) hinders the realization of RF system-on-a-chip (SoC) for commercial applications. This motivates great research efforts in developing hgh-performance inductors for RFIC applications. To date, many different types of spiral IC inductors have been reported with large inductance values and high quality factor values. Unfortunately, they mainly use some exotic structures and fabrication techniques that are not compatible to commercial CMOS technologies. For example, one possible solution to improve the Q-factor is to include magnetic media into the inductor structures to preserve the magnetic energy that will compensate the electrical losses due to resistance and . substrate coupling effects. Various MEMS (micro-electro-mechanical system) techniques have been used to make such inductors with magnetic media inside. However, any MEMS techniques can still not be integrated into the CMOS technologies. In addition, IC inductors made by such techniques are typically very large in slzes (i.e., >100pmXIOOpm or several times of a typical IC bonding pad), hence are not suitable for RF SoC design. Apparently, it is highly desirable to develop super compact [i-e ~ transistor-size) high-performance inductors for RF SoC designs Since shrinking in the inductor size will increase the resistive loss inevitably, novel techniques to integrate magnetic media into such super compact inductors are essential to recovering the electric energy lost from the magnetic field. To this end, some initial work has been reported [I-21. Nevertheless, more research is needed to ensure super-GHz operation of such inductors with magnetic media that is required by RFIC applications. To achieve these goals, it is imperative to deve1op.a new modelmg technique and simulation software that would be able to handle 3D arbitraw electromagnetic structures in general, and RFIC inductor in particular, with magnetic media integrated iriside in various formats. Existing special EM CAD simulators for RF integrated inductors such as GEMCAPZ. [3] and ASITIC [41 cannot deal with magnetic-enhanced inductor structures because of their inability to deal with magnetic materials involved. Existing commercial full-wave EM modeling software, such as KFSS, employs the finite element method to carry out EM analysis that usually leads to a large number of unknowns associated with the global meshing required to cover all parts of the structure to be analyzed and its surrounchg exteml space. Obviously, the correspondmg equation-solving process requires excessive memory and CPU time. We report a new EM simulation CAD tool, entitled L-simulator, which is developed to accurately simulate 3D EM structures of arbitrary geometries, includmg magnetic-enhanced RF IC micro inductors. The new L-simulator uses a novel magPEEC modeh algorithm we developed [5], whch originated from a%partial element equivalent circuit (PEEC) method initially proposed to model 3D multi-conductor systems in [ti] and later extended to include dielectrics [7], to include the inductive effects of magnetic material. An existing FastCap electrical modeling techruque [XI is adopted to include the capacitive effects of dielectrics. The magPEEC technique can address the impact of magnetic materials by accounting for fictitious magnetized currents on the surface of permeable materials, while the FastCap can evaluate the effects of dielectrics by using equivalent polarized charges on surface of dielectrics." @default.
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• W2168986288 date "2004-01-01" @default.
• W2168986288 modified "2023-09-26" @default.
• W2168986288 title "SIMULATION AND DESIGN OF 3D GEOMETRIC RF IC INDUCTORS BY NOVEL MODELING TECNIQUES WITH MAGPEEC PLUS FASTCAP (Invited Paper)" @default.
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