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- W2169132364 abstract "A novel insulated gate bipolar transistor (IGBT) entitled NPN aided fast switching IGBT (NFS-IGBT) with a P-buffer layer is presented, which enhances the switching speed greatly. Compared with the conventional IGBT, double sided NPN structure is incorporated into the anode to facilitate the turn-off process. The proposed structure is verified by two-dimensional mixed device-circuit simulation, which indicates that the turn-off time is drastically reduced to one third of the conventional value at the expense of acceptable increase of on-state voltage drop. The tradeoff performance also shows great improvement for the new structure." @default.
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- W2169132364 date "2014-01-01" @default.
- W2169132364 modified "2023-09-27" @default.
- W2169132364 title "NPN aided fast switching insulated gate bipolar transistor with a p-buffer layer" @default.
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- W2169132364 doi "https://doi.org/10.1587/elex.11.20140294" @default.
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