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• W2169155196 abstract "The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained." @default.
• W2169155196 created "2016-06-24" @default.
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• W2169155196 date "2008-10-01" @default.
• W2169155196 modified "2023-09-24" @default.
• W2169155196 title "$hbox{HfO}_{2}$ Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation" @default.
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• W2169155196 doi "https://doi.org/10.1109/ted.2008.2003031" @default.
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