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• W2169546611 abstract "In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications." @default.
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• W2169546611 date "2007-11-01" @default.
• W2169546611 modified "2023-10-18" @default.
• W2169546611 title "A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels" @default.
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• W2169546611 doi "https://doi.org/10.1109/led.2007.906808" @default.
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