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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2169661305> ?p ?o ?g. }

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• W2169661305 startingPage "59" @default.
• W2169661305 abstract "In the present work, a high aspect ratio process (HARP) using a new O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gapfill in sub-65-nm CMOS. Good gapfill performance up to aspect ratios greater than 10:1 was demonstrated. Since the HARP process does not attack the STI liner as compared to HDP, a variety of different STI liners can be implemented. By comparing HARP with HDP, the geometry dependence of nand p-FET performance due to STI stress is discussed" @default.
• W2169661305 created "2016-06-24" @default.
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• W2169661305 date "2007-05-01" @default.
• W2169661305 modified "2023-09-27" @default.
• W2169661305 title "Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance" @default.
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• W2169661305 doi "https://doi.org/10.1109/tsm.2007.896632" @default.
• W2169661305 hasPublicationYear "2007" @default.
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