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- W2169709347 abstract "We report the fabrication of double heterojunction bipolar transistors (DHBTs) with the use of a new quaternary InGaAsN material system that takes advantage of a low energy band gap in the base to reduce operating voltages in GaAs-based electronic devices. InGaP/In/sub 0.03/Ga/sub 0.97/As/sub 0.99/N/sub 0.01//GaAs DHBTs with improved band gap engineering at both heterojunctions exhibit a DC peak current gain over 16 with small active emitter area. The use of the InGaAsN base layer allows a significant reduction of the turn-on voltage by 250 mV for the new technology over a standard InGaP/GaAs HBT, while maintaining high-frequency characteristics with cut-off frequency and maximum oscillation frequency as high as 40 GHz and 70 GHz, respectively. This technology is promising for next generation RF circuits using GaAs-based HBTs by reducing the operating voltage for low power consumption and better handling of supply voltages in advanced wireless handsets." @default.
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- W2169709347 date "2002-11-13" @default.
- W2169709347 modified "2023-09-26" @default.
- W2169709347 title "High-speed performance of NpN InGaAsN-based double heterojunction bipolar transistors" @default.
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- W2169709347 doi "https://doi.org/10.1109/gaas.2001.964376" @default.
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