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- W2169729069 abstract "A superlattice solar cell with InGaAs well and GaAsP barrier was realized for the first time. Increase in short-circuit current by 2 mA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> was achieved with 60 stacks of the 3.7-nm-thick wells as compared with a GaAs p-i-n reference cell. No degradation of spectral response for the wavelength range of GaAs absorption suggested efficient carrier transport across the wells due to tunneling through the thin barriers. A breakthrough for this achievement was strain management with monolayer-thin GaAs layer at the InGaAs/GaAsP interface, where huge lattice mismatch seems to have induced localized defects and have functioned as recombination centers." @default.
- W2169729069 created "2016-06-24" @default.
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- W2169729069 date "2010-06-01" @default.
- W2169729069 modified "2023-10-14" @default.
- W2169729069 title "InGaAs/GaAsP strain-compensated superlattice solar cell for enhanced spectral response" @default.
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- W2169729069 doi "https://doi.org/10.1109/pvsc.2010.5614127" @default.
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