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• W2169749201 abstract "We proposed a growth technique for III–V–N alloys with high quality and nitrogen composition, which was the low-temperature growth under atomic hydrogen irradiation. In the growth of GaPN, nitrogen compositions higher than 6% were obtained at growth temperatures lower than 350°C. GaAsPN alloys grown on GaP substrates were examined using X-ray diffraction and transmission electron microscopy. It was found that structural crystalline quality of a GaAsyP0.93−yN0.07 layer grown at 350°C was improved by atomic hydrogen irradiation. Photoluminescence was obtained from a GaAs0.33P0.60N0.07/GaP double heterostructure lattice matched to a GaP substrate." @default.
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• W2169749201 date "2003-04-01" @default.
• W2169749201 modified "2023-10-09" @default.
• W2169749201 title "Improvement of crystalline quality of GaAs P1−−N layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation" @default.
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• W2169749201 doi "https://doi.org/10.1016/s0022-0248(02)02367-9" @default.
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