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- W2170182593 abstract "Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes." @default.
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- W2170182593 date "2009-07-01" @default.
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- W2170182593 title "Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition" @default.
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- W2170182593 doi "https://doi.org/10.1109/led.2009.2020615" @default.
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