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- W2170230273 abstract "The use of a lift-off technique to fabricate a high-density structure consisting of multiple layers of metal/polyimide thin-film structures on a silicon substrate is described. To achieve better performance and high yield, the process design, the processing parameters, the thickness of the Cr/Cu/Cr metallurgy, and the use of suitable polyimide dielectrics, were evaluated. The plasma processing conditions, the types of passivation metals on Cu, and the use of a siloxane-polyimide as the gap-fill/etch-stop material were all shown to play a critical role in affecting the interconnection resistance and yield of the multilayer thin-film structures. By optimizing these parameters the feasibility of fabricating high-density thin-film wiring layers with good yield is demonstrated. >" @default.
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- W2170230273 date "1993-01-01" @default.
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- W2170230273 title "Factors affecting the interconnection resistance and yield in multilayer polyimide/copper structures" @default.
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- W2170230273 doi "https://doi.org/10.1109/33.214864" @default.
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