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• W2170332946 abstract "We have developed ZnO thin-film transistor design and fabrication techniques to demonstrate microwave frequency operation with 2-mum gate length devices produced on GaAs substrates. Using SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate insulator and pulsed laser deposited ZnO active layers, a drain-current ON/OFF ratio of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> , a drain-current density of 400 mA/mm, a field-effect mobility of 110 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V ldr s, and a subthreshold gate voltage swing of 109 m/dec were achieved. Devices with Ti-gate metal had current and power gain cutoff frequencies of 500 and 400 MHz, respectively." @default.
• W2170332946 created "2016-06-24" @default.
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• W2170332946 date "2008-09-01" @default.
• W2170332946 modified "2023-09-30" @default.
• W2170332946 title "Microwave ZnO Thin-Film Transistors" @default.
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• W2170332946 doi "https://doi.org/10.1109/led.2008.2001635" @default.
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