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• W2170348544 abstract "Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SiC substrates with N/sup +/ epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. A buried channel mobility of 230 cm/sup 2//Vs and an accumulation-mode surface mobility of 45 cm/sup 2//Vs are extracted at room temperature under a 50% activation of channel donor impurities." @default.
• W2170348544 created "2016-06-24" @default.
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• W2170348544 date "2000-01-01" @default.
• W2170348544 modified "2023-09-26" @default.
• W2170348544 title "Characterization of silicon carbide (SiC) epitaxial channel MOSFETs" @default.
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• W2170348544 doi "https://doi.org/10.1109/16.877186" @default.
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