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• W2170620265 abstract "A highly reliable nonvolatile memory device suitable for high-density electrically erasable and programmable read only memories (EEPROMs) is described. A metal-oxide-nitride-oxide-semiconductor (MONOS) structure whose top oxide is fabricated by chemical vapor deposition (CVD) on the nitride is proposed. This CVD oxide is densified by pyrogenic annealing and has stoichiometric SiO/sub 2/ characteristics. Its potential barrier, which prevents stored charges from decaying through the top oxide to the gate, thus becomes sharper than that of the thermally grown top oxide used in the conventional MONOS structure. For comparison between the proposed MONOS, conventional MONOS, and MNOS structures, three devices were fabricated on the same process line. The 16.7-nm nitride thickness in combination with a top oxide thickness of 4.0 nm results in a gate capacitance equivalent to that of the conventional NMOS structure with a 23.5-nm nitride thickness. Moreover, an asymmetric erase/write programming voltage has been adapted to the MONOS device operation by considering both erased-state degradation and written-state retention. At 85 degrees C, the proposed MONOS device has 10/sup 7/-cycle endurance with 10-year data retention. >" @default.
• W2170620265 created "2016-06-24" @default.
• W2170620265 creator A5027123838 @default.
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• W2170620265 date "1993-01-01" @default.
• W2170620265 modified "2023-09-25" @default.
• W2170620265 title "A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles" @default.
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• W2170620265 doi "https://doi.org/10.1109/16.239742" @default.
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