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• W2170628597 abstract "The influence of the laser annealing on the defect structure of the near-surface layer of silicon crystal implanted with 40 keV Ge ions is reported. Evolution of defect structure during nanosecond pulse laser annealing is characterised by means of several complementary methods: reflection high-energy electron diffraction, interference-polarizing microscopy, Rutherford back-scattering and secondary ion mass spectrometry. Regions irradiated with different energy densities of the laser beam are compared. The role of the dopant in the layer recrystallised from the melt is discussed." @default.
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• W2170628597 date "2004-07-01" @default.
• W2170628597 modified "2023-10-17" @default.
• W2170628597 title "Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing" @default.
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• W2170628597 doi "https://doi.org/10.1051/epjap:2004133" @default.
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