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- W2170706028 abstract "This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random access memory (RRAM) technologies for system-on-panel applications. The high-performance a-IZTO TFTs with effective carry mobility of 39.6 cm2/V s, threshold voltage of −0.28 V and subthreshold swing of 0.25 decade/V are obtained in this study. Thermal post-annealing also was used to provide stable electrical characteristics with a few threshold voltage shift after positive gate bias stress. On the other hand, the RRAM device with a-IZTO film acting as active layer exhibits superior bipolar resistive switching characteristics. The wide (>10) resistance window and the stability endurance of hundreds cycle are achieved. Both of the proposed a-IZTO TFT and RRAM have promising potential to be integrated with a-IZTO-based periphery electronic circuits for flat-panel display applications." @default.
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- W2170706028 date "2014-01-01" @default.
- W2170706028 modified "2023-09-25" @default.
- W2170706028 title "InZnSnO-Based Electronic Devices for Flat Panel Display Applications" @default.
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- W2170706028 doi "https://doi.org/10.1149/2.008409jss" @default.
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