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• W2170782769 abstract "The results presented in this paper show that highly conductive and transparent ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :Al films can be grown on glass by a high throughput industrial CVD process at atmospheric pressure. Amorphous silicon p-i-n solar cells have been grown on as deposited ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :Al films in order to demonstrate the suitability of this material as front contact for thin silicon film solar cells. Aluminum doped ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> (ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :Al) films have been deposited on glass in an in-line industrial-type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. Tertiary-butanol has been used as oxidant for diethylzinc and trimethylaluminium as dopant gas. ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :Al films can be grown at very high deposition rates of ~ 14 nm/s for a substrate speed from 150 mm/min to 500 mm/min. The electrical, structural (crystallinity and morphology) and optical properties of the deposited films have been characterized by using Hall, four point probe, X-ray diffraction, atomic force microscope and spectrophotometer, respectively. All the films have c-axis, (002) preferential orientation and good crystalline quality. ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :Al films are highly conductive (R <; 9 Ohm/sq, for a film thickness above 1300 nm) and transparent in the visible range (>; 80%). Amorphous silicon p-i-n solar cells have been grown on as deposited ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :Al films, without optimizing the surface texturing of ZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> :Al films to enhance light scattering. An initial efficiency of approximately 8% has been achieved." @default.
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• W2170782769 date "2011-06-01" @default.
• W2170782769 modified "2023-09-26" @default.
• W2170782769 title "Industrial high-rate (&#x223C;14 nm/s) deposition of low resistive and transparent ZnO<inf>x</inf>:Al films on glass" @default.
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• W2170782769 doi "https://doi.org/10.1109/pvsc.2011.6186688" @default.
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