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- W2170824401 abstract "Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2/spl times/10/sup -4/ A/cm/sup 2/. Even at 200/spl deg/C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47/spl times/10/sup -4/ A/cm/sup 2/. These properties are better than the /spl beta/-SiC on Si HJDs for high temperature applications." @default.
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- W2170824401 date "2002-03-01" @default.
- W2170824401 modified "2023-10-17" @default.
- W2170824401 title "A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications" @default.
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- W2170824401 doi "https://doi.org/10.1109/55.988818" @default.
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