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- W2170865109 abstract "Neben den reinen Schwingungs-Raman-Banden weist das Tieftemperatur-Raman-Spektrum von Cs2U(IV)Cl6 einige weitere Signale auf, deren Auftreten von der Wahl der Erregerlinie weitgehend unabhängig ist und die wir deshalb “elektronischen” Raman-Effekten zuschreiben. Unterstützt wird diese Ansicht auch dadurch, daß diese Signale jeweils entweder in unmittelbarer Nähe von absorptionsspektroskopisch direkt beobachteten Banden liegen oder sich innerhalb enger Energiebereiche bewegen, in welchen aufgrund kristallfeldtheoretischer Berechnungen Kristallfeld-Niveaus zu erwarten sind. Sowohl die Zahl als auch die relative Gruppierung der elektronischen Raman-Banden weisen darauf hin, daß das U4+-Zentralion einem effektiven Kristallfeld niedriger Symmetrie ausgesetzt ist. Besides the pure vibrational Raman bands, the low-temperature Raman-spectrum of Cs2U(IV)Cl6 contains several additional signals. Since their appearance is widely independent of the choice of the stimulating laser line, we ascribe them to “electronic” Raman effects. This view is supported by the fact that these signals are either close to bands which have been observed directly by absorption spectroscopy or lie within narrow energy ranges of crystal field states, which have been predicted by crystal field theory. The number as well as the relative grouping of the electronic Raman-bands show, that the U4+-central ion is exposed to an effective crystal field of low symmetry." @default.
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- W2170865109 date "1976-06-01" @default.
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- W2170865109 title "Zur Elektronenstruktur hochsymmetrischer Komplexe der Lanthanoiden und Actinoiden III. “Elektronisches” Raman-Spektrum von Cs2U(IV)Cl6 [1]" @default.
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- W2170865109 doi "https://doi.org/10.1002/bbpc.19760800608" @default.
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